STMicroelectronics
BU931T
Bipolar Transistors - BJT NPN Power Darlington
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- Bipolar Transistors - BJT
- Series
- BU931T
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 400 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 1.8 V
- Maximum DC Collector Current
- 20 A
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 175 C
- DC Current Gain hFE Max
- 300
- Continuous Collector Current
- 10 A
- DC Collector/Base Gain hfe Min
- 300
- Pd - Power Dissipation
- 125 W
Show more parameters (2)
- Qualification
- AEC-Q101
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.