Microchip Technology
MSC017SMA120B4N
SiC MOSFETs MOSFET SIC 1200 V 17 mOhm TO-247-4 Notch
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- SiC MOSFETs
- Package
- TO-247-4
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
22 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Id - Continuous Drain Current
- 119 A
- Rds On - Drain-Source Resistance
- 22 mOhms
- Vgs - Gate-Source Voltage
- - 10 V, + 23 V
- Vgs th - Gate-Source Threshold Voltage
- 5 V
- Qg - Gate Charge
- 194 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 577 W
- Channel Mode
- Enhancement
Show more parameters (10)
- Configuration
- Single
- Country of Assembly
- CN
- Country of Diffusion
- US
- Country of Origin
- CN
- Fall Time
- 13 ns
- Rise Time
- 18 ns
- Technology
- SiC
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 51 ns
- Typical Turn-On Delay Time
- 29 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.