Infineon Technologies
BFP 720F H6327
RF Bipolar Transistors RF BIP TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- RF Bipolar Transistors
- Series
- BFP720
- Package
- TSFP-4-1
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Type
- Bipolar
- Technology
- SiGe
- Collector- Emitter Voltage VCEO Max
- 4 V
- Emitter- Base Voltage VEBO
- 1.2 V
- Continuous Collector Current
- 25 mA
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Collector- Base Voltage VCBO
- 13 V
- DC Current Gain hFE Max
- 400
- Height
- 0.55 mm
- Length
- 1.4 mm
- Operating Frequency
- 45 GHz
Show more parameters (4)
- Type
- RF Silicon Germanium
- Width
- 0.8 mm
- Pd - Power Dissipation
- 100 mW
- Part # Aliases
- BFP720FH6327XTSA1 BFP72FH6327XT SP000750412
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.