Central Semiconductor
2N3700
Bipolar Transistors - BJT NPN Ampl/Switch
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N3700
- Package
- TO-18
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 80 V
- Collector- Base Voltage VCBO
- 140 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 0.5 V
- Maximum DC Collector Current
- 1 A
- Gain Bandwidth Product fT
- 400 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Height
- 5.33 mm
- Length
- 5.84 mm
Show more parameters (4)
- Width
- 5.84 mm
- DC Collector/Base Gain hfe Min
- 15
- Pd - Power Dissipation
- 500 mW
- Part # Aliases
- 2N3700 PBFREE
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.