Infineon Technologies
BSM50GX120DN2
IGBT Modules
Basic Information
- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- IGBT Modules
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Product
- IGBT Silicon Modules
- Configuration
- 3-Phase
- Collector- Emitter Voltage VCEO Max
- 1200 V
- Collector-Emitter Saturation Voltage
- 2.5 V
- Continuous Collector Current at 25 C
- 78 A
- Gate-Emitter Leakage Current
- 200 nA
- Pd - Power Dissipation
- 400 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Technology
- Si
- Maximum Gate Emitter Voltage
- 20 V
- Part # Aliases
- BSM50GX120DN2BOSA1 SP000100372
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.