ROHM Semiconductor
EMG11T2R
Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- EMG11
- Package
- EMT-5
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Configuration
- Dual Common Emitter
- Transistor Polarity
- NPN
- Typical Input Resistor
- 2.2 kOhms
- Typical Resistor Ratio
- 21
- DC Collector/Base Gain hfe Min
- 80
- Collector- Emitter Voltage VCEO Max
- 50 V
- Continuous Collector Current
- 100 mA
- Peak DC Collector Current
- 100 mA
- Pd - Power Dissipation
- 150 mW
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 80
- Height
- 0.5 mm
Show more parameters (3)
- Length
- 1.6 mm
- Width
- 1.2 mm
- Part # Aliases
- EMG11
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.