CML Micro
MWT-LN600
RF MOSFET Transistors Low Noise pHEMT Devices
Basic Information
View Datasheet ↗- Manufacturer
- CML Micro
- Product Category
- RF MOSFET Transistors
- Series
- MWT
- Package
- Die
- Packaging
- Bulk
Technical Specifications
11 parameters- Technology
- GaAs
- Id - Continuous Drain Current
- 175 mA
- Vds - Drain-Source Breakdown Voltage
- 4.5 V
- Operating Frequency
- 26 GHz
- Gain
- 8 dB, 11 dB
- Output Power
- 20 dBm
- Maximum Operating Temperature
- + 150 C
- Country of Origin
- US
- Forward Transconductance - Min
- 300 mS
- Pd - Power Dissipation
- 500 mW
- Tradename
- MWT-LN600
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.