Comchip Technology
SS8050-G
Bipolar Transistors - BJT NPN TRANSISTOR 1.5A 40V
Basic Information
View Datasheet ↗- Manufacturer
- Comchip Technology
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 25 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.5 V
- Maximum DC Collector Current
- 1.5 A
- Gain Bandwidth Product fT
- 100 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 350
- DC Collector/Base Gain hfe Min
- 40
Show more parameters (2)
- Pd - Power Dissipation
- 300 mW
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.