Central Semiconductor
MPQ2222 TIN/LEAD
Bipolar Transistors - BJT 60Vcbo 40Vceo 5.0Vebo 500mA 650mA
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- MPQ2222
- Package
- TO-116-14
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Quad
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 400 mV
- Pd - Power Dissipation
- 1.9 W
- Gain Bandwidth Product fT
- 200 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 500 mA
Show more parameters (2)
- DC Collector/Base Gain hfe Min
- 75 at 10 mA, 10 V
- DC Current Gain hFE Max
- 300 at 150 mA, 10 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.