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Vishay / Siliconix

SIHA17N80E-E3

MOSFET 800V Vds 30V Vgs TO-220 FULLPAK

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay / Siliconix
Product Category
MOSFET
Series
E
Package
TO-220FP-3
Mounting Style
Through Hole
Packaging
Tube
RoHS
Compliant (source record)

Technical Specifications

20 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
800 V
Id - Continuous Drain Current
15 A
Rds On - Drain-Source Resistance
250 mOhms
Vgs th - Gate-Source Threshold Voltage
4 V
Vgs - Gate-Source Voltage
30 V
Qg - Gate Charge
122 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
35 W
Show more parameters (8)
Configuration
Single
Channel Mode
Enhancement
Transistor Type
1 N-Channel
Fall Time
26 ns
Rise Time
24 ns
Typical Turn-Off Delay Time
71 ns
Typical Turn-On Delay Time
22 ns
Unit Weight
0.063493 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SIHA17N80E-E3 Specifications and Datasheet | ChipSourceHub