Qorvo
QPD1011SR
RF JFET Transistors .03-1.2GHz 7W 50V GaN
Basic Information
View Datasheet ↗- Manufacturer
- Qorvo
- Product Category
- RF JFET Transistors
- Series
- QPD1011
- Package
- SMD-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Type
- HEMT
- Technology
- GaN SiC
- Gain
- 21 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 50 V
- Vgs - Gate-Source Breakdown Voltage
- 145 V
- Id - Continuous Drain Current
- 1.46 A
- Output Power
- 8.7 W
- Maximum Drain Gate Voltage
- 55 V
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Pd - Power Dissipation
- 13 W
Show more parameters (4)
- Operating Frequency
- 30 MHz to 1200 MHz
- Development Kit
- QPD1011EVB01
- Moisture Sensitive
- Yes
- Part # Aliases
- QPD1011
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.