onsemi
MJD31CT4GN
Bipolar Transistors - BJT BIP DPAK NPN 3A 100V TR
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- MJD31C
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 5 A
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 1.2 V
- Pd - Power Dissipation
- 15 W
- Gain Bandwidth Product fT
- 3 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (4)
- Continuous Collector Current
- 3 A
- Country of Origin
- MY
- DC Collector/Base Gain hfe Min
- 10
- DC Current Gain hFE Max
- 50
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.