Nexperia
BCM856BSH-QF
Bipolar Transistors - BJT SOT363 65V .1A PNP/PNP BJT
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- TSSOP-6
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
16 parameters- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Maximum DC Collector Current
- 100 mA
- Collector- Emitter Voltage VCEO Max
- 65 V
- Collector- Base Voltage VCBO
- 80 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 300 mV
- Pd - Power Dissipation
- 400 mW
- Gain Bandwidth Product fT
- 100 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Qualification
- AEC-Q101
Show more parameters (4)
- Country of Origin
- MY
- DC Collector/Base Gain hfe Min
- 200
- DC Current Gain hFE Max
- 450
- Part # Aliases
- 934662837135
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.