Wolfspeed / Cree
CGHV40180F
RF JFET Transistors GaN HEMT
Basic Information
View Datasheet ↗- Manufacturer
- Cree, Inc.
- Brand
- Wolfspeed / Cree
- Product Category
- RF JFET Transistors
- Package
- 440223
- Mounting Style
- Screw Mount
- Packaging
- Tray
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Type
- HEMT
- Technology
- GaN
- Gain
- 20.3 dB
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 125 V
- Vgs - Gate-Source Breakdown Voltage
- - 10 V, 2 V
- Id - Continuous Drain Current
- 18 A
- Output Power
- 180 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 150 W
- Operating Frequency
- DC to 1000 MHz
Show more parameters (2)
- Development Kit
- CGHV40180F-TB1
- Vgs th - Gate-Source Threshold Voltage
- - 3.8 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.