onsemi
FJI5603DTU
Bipolar Transistors - BJT NPN Silicon
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- FJI5603D
- Package
- I2PAK-3
- Mounting Style
- SMD/SMT
- Packaging
- Tube
Technical Specifications
15 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Maximum DC Collector Current
- 3 A
- Collector- Emitter Voltage VCEO Max
- 800 V
- Collector- Base Voltage VCBO
- 1.6 kV
- Emitter- Base Voltage VEBO
- 12 V
- Collector-Emitter Saturation Voltage
- 1.2 V
- Pd - Power Dissipation
- 100 W
- Gain Bandwidth Product fT
- 5 MHz
- Maximum Operating Temperature
- + 150 C
- Country of Origin
- CN
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 20
- DC Current Gain hFE Max
- 20
- Unit Weight
- 0.073511 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.