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Vishay / Siliconix

SIHA12N50E-E3

MOSFET 500V Vds 30V Vgs TO-220 FULLPAK

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay / Siliconix
Product Category
MOSFET
Series
E
Package
TO-220FP-3
Mounting Style
Through Hole
Packaging
Tube
RoHS
Compliant (source record)

Technical Specifications

22 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
550 V
Id - Continuous Drain Current
10.5 A
Rds On - Drain-Source Resistance
380 mOhms
Vgs th - Gate-Source Threshold Voltage
4 V
Vgs - Gate-Source Voltage
30 V
Qg - Gate Charge
25 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
32 W
Show more parameters (10)
Configuration
Single
Channel Mode
Enhancement
Height
15.49 mm
Length
10.41 mm
Width
4.7 mm
Fall Time
12 ns
Rise Time
16 ns
Typical Turn-Off Delay Time
29 ns
Typical Turn-On Delay Time
13 ns
Unit Weight
0.211644 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SIHA12N50E-E3 Specifications and Datasheet | ChipSourceHub