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MACOM

CGH27060F

GaN FETs GaN HEMT VHF-3.0GHz, 60 Watt

Basic Information

View Datasheet ↗
Manufacturer
MACOM
Product Category
GaN FETs
Package
440193
Mounting Style
Screw Mount
Packaging
Tray

Technical Specifications

17 parameters
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
120 V
Id - Continuous Drain Current
14 A
Vgs th - Gate-Source Threshold Voltage
- 3 V
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
56 W
Configuration
Single
Country of Origin
US
Gain
14 dB
Maximum Operating Frequency
2.7 GHz
Minimum Operating Frequency
30 MHz
Show more parameters (5)
Output Power
60 W
Technology
GaN
Transistor Type
GaN HEMT
Vgs - Gate-Source Breakdown Voltage
- 10 V, 2 V
Unit Weight
0.372695 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

CGH27060F Specifications and Datasheet | ChipSourceHub