NXP Semiconductors
MW6S004NT1
RF MOSFET Transistors HV6 1950MHZ 2W PLD1.5N
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Series
- MW6S004NT1
- Package
- PLD-1.5-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- E
Technical Specifications
18 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Vds - Drain-Source Breakdown Voltage
- 68 V
- Gain
- 18 dB
- Output Power
- 4 W
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Height
- 1.83 mm
- Length
- 6.73 mm
- Operating Frequency
- 2 GHz
- Width
- 5.97 mm
Show more parameters (6)
- Channel Mode
- Enhancement
- Moisture Sensitive
- Yes
- Vgs - Gate-Source Voltage
- 12 V
- Vgs th - Gate-Source Threshold Voltage
- 2 V
- Part # Aliases
- 935320257515
- Unit Weight
- 0.009877 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.