IXYS
IXYA55N65B5
IGBTs 650V, 55A, XPT Gen5 B5 IGBT in TO-263
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- IGBTs
- Series
- Trench
- Package
- TO-263-2L
- Mounting Style
- SMD/SMT
- Packaging
- Tube
Technical Specifications
13 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.3 V
- Maximum Gate Emitter Voltage
- 20 V
- Continuous Collector Current at 25 C
- 122 A
- Pd - Power Dissipation
- 395 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Continuous Collector Current Ic Max
- 122 A
- Country of Origin
- KR
- Gate-Emitter Leakage Current
- 100 nA
Show more parameters (1)
- Tradename
- XPT
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.