Nexperia
PHPT60610NYX
Bipolar Transistors - BJT 10A NPN High Power Bipolar Transistor
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- PowerSO-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 250 mV
- Maximum DC Collector Current
- 20 A
- Gain Bandwidth Product fT
- 140 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- DC Current Gain hFE Max
- 410 at 500 mA, 2 V
Show more parameters (6)
- Continuous Collector Current
- 10 A
- DC Collector/Base Gain hfe Min
- 240 at 500 mA, 2 V
- Pd - Power Dissipation
- 25 W
- Qualification
- AEC-Q101
- Part # Aliases
- PHPT60610NYX
- Unit Weight
- 0.002635 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.