onsemi
NSS20201DMTTBG
Bipolar Transistors - BJT 20V DUAL LOW VCE(SA T) FOR
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- NSS20201DM
- Package
- WDFN-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 20 V
- Collector- Base Voltage VCBO
- 20 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 330 mV
- Pd - Power Dissipation
- 2.27 W
- Gain Bandwidth Product fT
- 180 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- 2 A
Show more parameters (5)
- Country of Assembly
- MY
- Country of Diffusion
- MY
- Country of Origin
- MY
- DC Collector/Base Gain hfe Min
- 100
- DC Current Gain hFE Max
- 250
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.