Diodes Incorporated
BSS123TA
MOSFET N-Chnl 100V
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFET
- Series
- BSS123
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
23 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 170 mA
- Rds On - Drain-Source Resistance
- 6 Ohms
- Vgs - Gate-Source Voltage
- 20 V
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 360 mW
- Configuration
- Single
- Channel Mode
- Enhancement
Show more parameters (11)
- Height
- 1 mm
- Length
- 2.9 mm
- Product
- MOSFET Small Signal
- Transistor Type
- 1 N-Channel
- Type
- FET
- Width
- 1.3 mm
- Fall Time
- 10 ns
- Rise Time
- 10 ns
- Typical Turn-Off Delay Time
- 15 ns
- Typical Turn-On Delay Time
- 10 ns
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.