ON Semiconductor / Fairchild
FJN3305RTA
Bipolar Transistors - Pre-Biased NPN Si Transistor Epitaxial
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Brand
- ON Semiconductor / Fairchild
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- FJN3305R
- Package
- TO-92-3 Kinked Lead
- Mounting Style
- Through Hole
- Packaging
- Ammo Pack
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Configuration
- Single
- Transistor Polarity
- NPN
- Typical Input Resistor
- 4.7 kOhms
- Typical Resistor Ratio
- 0.47
- DC Collector/Base Gain hfe Min
- 30
- Collector- Emitter Voltage VCEO Max
- 50 V
- Continuous Collector Current
- 0.1 A
- Peak DC Collector Current
- 100 mA
- Pd - Power Dissipation
- 300 mW
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 30
Show more parameters (6)
- Emitter- Base Voltage VEBO
- 10 V
- Height
- 5.33 mm
- Length
- 5.2 mm
- Type
- NPN Epitaxial Silicon Transistor
- Width
- 4.19 mm
- Unit Weight
- 0.008466 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.