Nexperia
PBSS4021SPN,115
Bipolar Transistors - BJT Dual +/-20V '+7.5A -6.3A 0.86W 115MHz
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- SO-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 20 V
- Collector- Base Voltage VCBO
- 20 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 185 mV, - 235 mV
- Maximum DC Collector Current
- 7.5 A, - 6.3 A
- Gain Bandwidth Product fT
- 115 MHz, 105 MHz
- Maximum Operating Temperature
- + 150 C
- Continuous Collector Current
- + 7.5 A, - 6.3 A
- DC Collector/Base Gain hfe Min
- 300
- Pd - Power Dissipation
- 860 mW
Show more parameters (1)
- Unit Weight
- 0.017870 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.