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onsemi

MMBT8099LT1G

Bipolar Transistors - BJT 500mA 80V NPN

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
Bipolar Transistors - BJT
Series
MMBT8099L
Package
SOT-23-3
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

16 parameters
Technology
Si
Transistor Polarity
NPN
Configuration
Single
Maximum DC Collector Current
500 mA
Collector- Emitter Voltage VCEO Max
80 V
Collector- Base Voltage VCBO
80 V
Emitter- Base Voltage VEBO
6 V
Collector-Emitter Saturation Voltage
400 mV
Pd - Power Dissipation
225 mW
Gain Bandwidth Product fT
150 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Show more parameters (4)
Continuous Collector Current
500 mA
Country of Origin
CN
DC Current Gain hFE Max
300
Unit Weight
0.001058 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

MMBT8099LT1G Specifications and Datasheet | ChipSourceHub