Central Semiconductor
2N3505 PBFREE
Bipolar Transistors - BJT 60Vcbo 60Vceo 5.0Vebo 300mA 8.0pF
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N35
- Package
- TO-18-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
11 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.4 V
- Gain Bandwidth Product fT
- 200 MHz
- DC Current Gain hFE Max
- 300 at 150 mA, 10 V
- Continuous Collector Current
- 150 mA
- DC Collector/Base Gain hfe Min
- 100 at 150 mA, 10 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.