Diodes Incorporated
MMDT2227Q-7-F
Bipolar Transistors - BJT General Purpose Transistor SOT363 T&R 3K
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- MMDT2227Q
- Package
- SOT-363-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 40 V, - 60 V
- Collector- Base Voltage VCBO
- 75 V, - 60 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 1 V, - 1.6 V
- Maximum DC Collector Current
- 600 mA
- Gain Bandwidth Product fT
- 300 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 300
Show more parameters (5)
- Continuous Collector Current
- 600 mA
- DC Collector/Base Gain hfe Min
- 100
- Pd - Power Dissipation
- 200 mW
- Qualification
- AEC-Q101
- Unit Weight
- 0.000212 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.