Toshiba
RN1116MFV,L3F
Bipolar Transistors - Pre-Biased Bias Resistor NPN .1A 50V 4.7kohm
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - Pre-Biased
- Series
- RN1116MFV
- Package
- SOT-723-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Configuration
- Single
- Transistor Polarity
- NPN
- Typical Input Resistor
- 4.7 kOhms
- Typical Resistor Ratio
- 0.47
- DC Collector/Base Gain hfe Min
- 50
- Maximum Operating Frequency
- 250 MHz
- Collector- Emitter Voltage VCEO Max
- 50 V
- Continuous Collector Current
- 100 mA
- Peak DC Collector Current
- 100 mA
- Pd - Power Dissipation
- 150 mW
- Maximum Operating Temperature
- + 150 C
- Emitter- Base Voltage VEBO
- 7 V
Show more parameters (3)
- Channel Mode
- Enhancement
- Maximum DC Collector Current
- 100 mA
- Unit Weight
- 0.000053 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.