Central Semiconductor
2N2369A
Bipolar Transistors - BJT NPN Fast SW SS
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N2369
- Package
- TO-18
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 15 V
- Collector- Base Voltage VCBO
- 40 V
- Emitter- Base Voltage VEBO
- 4.5 V
- Collector-Emitter Saturation Voltage
- 500 mV
- Maximum DC Collector Current
- 200 mA
- Gain Bandwidth Product fT
- 500 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 200 C
- DC Current Gain hFE Max
- 120
- Height
- 5.33 mm
Show more parameters (5)
- Length
- 5.84 mm
- Width
- 5.84 mm
- DC Collector/Base Gain hfe Min
- 20 at 100 mA, 1 V
- Pd - Power Dissipation
- 360 mW
- Part # Aliases
- 2N2369A PBFREE
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.