ON Semiconductor
2SB1205T-E
Bipolar Transistors - BJT BIP PNP 5A 20V
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SB1205
- Package
- TO-251-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 20 V
- Collector- Base Voltage VCBO
- - 25 V
- Emitter- Base Voltage VEBO
- - 5 V
- Collector-Emitter Saturation Voltage
- - 250 mV
- Maximum DC Collector Current
- - 8 A
- Gain Bandwidth Product fT
- 320 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 400
- Continuous Collector Current
- 5 A
Show more parameters (2)
- Pd - Power Dissipation
- 10 W
- Unit Weight
- 0.139332 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.