Diodes Incorporated
CTA2N1P-7-F
Bipolar Transistors - BJT NPN-TRANS P-CH MFET
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Series
- CTA2N1P
- Package
- SOT-363-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 40 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 750 mV
- Maximum DC Collector Current
- 600 mA
- Gain Bandwidth Product fT
- 250 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 300
- Continuous Collector Current
- 600 mA
- DC Collector/Base Gain hfe Min
- 20 at 100 uA, 1 V
Show more parameters (2)
- Pd - Power Dissipation
- 150 mW
- Unit Weight
- 0.000212 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.