Nexperia
PBSS4160PANP-QX
Bipolar Transistors - BJT The factory is currently not accepting orders for this product.
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Package
- DFN-2020-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Maximum DC Collector Current
- 1.5 A
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 185 mV
- Pd - Power Dissipation
- 2 W
- Gain Bandwidth Product fT
- 125 MHz, 175 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
Show more parameters (5)
- Qualification
- AEC-Q101
- Continuous Collector Current
- 1 A
- Country of Origin
- MY
- DC Collector/Base Gain hfe Min
- 70 at 1A, 2 V
- Part # Aliases
- 934664884115
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.