Nexperia
PDTA123TM,315
Bipolar Transistors - Pre-Biased Trans Digital BJT PNP 50V 100mA
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - Pre-Biased
- Package
- DFN-1006-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Configuration
- Single
- Transistor Polarity
- PNP
- Typical Input Resistor
- 2.2 kOhms
- DC Collector/Base Gain hfe Min
- 30
- Collector- Emitter Voltage VCEO Max
- - 50 V
- Continuous Collector Current
- 100 mA
- Peak DC Collector Current
- 100 mA
- Pd - Power Dissipation
- 250 mW
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Collector- Base Voltage VCBO
- - 50 V
- Emitter- Base Voltage VEBO
- - 5 V
Show more parameters (5)
- Height
- 0.47 mm
- Length
- 1.02 mm
- Operating Temperature Range
- - 65 C to + 150 C
- Width
- 0.5 mm
- Qualification
- AEC-Q101
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.