STMicroelectronics
BD912
Bipolar Transistors - BJT PNP General Purpose
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- Bipolar Transistors - BJT
- Series
- BD912
- Package
- TO-220-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 100 V
- Emitter- Base Voltage VEBO
- - 5 V
- Maximum DC Collector Current
- 15 A
- Gain Bandwidth Product fT
- 3 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 150
- Height
- 9.15 mm (Max)
- Length
- 10.4 mm (Max)
Show more parameters (4)
- Width
- 4.6 mm (Max)
- DC Collector/Base Gain hfe Min
- 15
- Pd - Power Dissipation
- 90 W
- Unit Weight
- 0.211644 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.