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Nexperia

PBSS8110D-QX

Bipolar Transistors - BJT PBSS8110D-Q/SOT457/SC-74

Basic Information

View Datasheet ↗
Manufacturer
Nexperia
Product Category
Bipolar Transistors - BJT
Package
SOT-457-6
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

17 parameters
Technology
Si
Transistor Polarity
NPN
Configuration
Single
Maximum DC Collector Current
3 A
Collector- Emitter Voltage VCEO Max
100 V
Collector- Base Voltage VCBO
120 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
200 mV
Pd - Power Dissipation
700 mW
Gain Bandwidth Product fT
100 MHz
Minimum Operating Temperature
- 65 C
Maximum Operating Temperature
+ 150 C
Show more parameters (5)
Continuous Collector Current
1 A
Country of Origin
MY
DC Collector/Base Gain hfe Min
80 at 1 A, 10 V
DC Current Gain hFE Max
500 at 250 mA, 10 V
Part # Aliases
934669956115

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

PBSS8110D-QX Specifications and Datasheet | ChipSourceHub