Central Semiconductor
2N5226 TIN/LEAD
Bipolar Transistors - BJT PNP 25Vcbo 25Vceo 4.0Vebo 8pF
Basic Information
View Datasheet ↗- Manufacturer
- Central Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- 2N5226
- Package
- TO-92-3
- Mounting Style
- Through Hole
- Packaging
- Bulk
Technical Specifications
12 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 25 V
- Collector- Base Voltage VCBO
- 25 V
- Emitter- Base Voltage VEBO
- 4 V
- Collector-Emitter Saturation Voltage
- 800 mV
- Pd - Power Dissipation
- 625 mW
- Gain Bandwidth Product fT
- 50 MHz
- Continuous Collector Current
- 500 mA
- DC Collector/Base Gain hfe Min
- 30
- DC Current Gain hFE Max
- 600
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.