Microchip Technology
APTGX100A120T1G
IGBT Modules PM-IGBT-TFS-SP1F
Basic Information
View Datasheet ↗- Manufacturer
- Microchip
- Brand
- Microchip Technology
- Product Category
- IGBT Modules
- Package
- SP1F
- Mounting Style
- Press Fit
Technical Specifications
11 parameters- Product
- Power Modules
- Configuration
- Half Bridge
- Collector- Emitter Voltage VCEO Max
- 1.2 kV
- Collector-Emitter Saturation Voltage
- 1.8 V
- Continuous Collector Current at 25 C
- 155 A
- Gate-Emitter Leakage Current
- 150 nA
- Pd - Power Dissipation
- 416 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 125 C
- Maximum Gate Emitter Voltage
- - 20 V, 20 V
- Technology
- Si
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.