Infineon Technologies
BC 807U E6327
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR ARRAY
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- Bipolar Transistors - BJT
- Series
- BC807
- Package
- SC-74-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Transistor Polarity
- PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 45 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.7 V
- Maximum DC Collector Current
- 500 mA
- Gain Bandwidth Product fT
- 200 MHz
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 400
- Height
- 1 mm
Show more parameters (6)
- Length
- 2.9 mm
- Width
- 1.6 mm
- Continuous Collector Current
- 500 mA
- DC Collector/Base Gain hfe Min
- 160
- Pd - Power Dissipation
- 330 mW
- Part # Aliases
- BC807UE6327HTSA1 BC87UE6327XT SP000012395
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.