NXP Semiconductors
MRFE6S9125NR1
RF MOSFET Transistors HV6E 125W
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Series
- MRFE6S9125N
- Package
- TO-270-4
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- E
Technical Specifications
19 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Vds - Drain-Source Breakdown Voltage
- - 500 mV, 66 V
- Gain
- 20.2 dB
- Output Power
- 27 W
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Height
- 2.64 mm
- Length
- 17.58 mm
- Operating Frequency
- 880 MHz
- Width
- 9.07 mm
Show more parameters (7)
- Number of Channels
- 1 Channel
- Channel Mode
- Enhancement
- Moisture Sensitive
- Yes
- Vgs - Gate-Source Voltage
- - 0.5 V, 12 V
- Vgs th - Gate-Source Threshold Voltage
- 2.1 V
- Part # Aliases
- 935314059528
- Unit Weight
- 0.058073 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.