Infineon / IR
IRF6795MTRPBF
MOSFET 25V 1 N-CH HEXFET 1.8mOhms 35nC
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon / IR
- Product Category
- MOSFET
- Package
- DirectFET-MX
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
25 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 25 V
- Id - Continuous Drain Current
- 160 A
- Rds On - Drain-Source Resistance
- 2.4 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1.8 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 35 nC
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 2.8 W
Show more parameters (13)
- Configuration
- Single
- Tradename
- DirectFET
- Height
- 0.7 mm
- Length
- 6.35 mm
- Transistor Type
- 1 N-Channel
- Width
- 5.05 mm
- Forward Transconductance - Min
- 100 S
- Fall Time
- 11 ns
- Moisture Sensitive
- Yes
- Rise Time
- 27 ns
- Typical Turn-Off Delay Time
- 16 ns
- Typical Turn-On Delay Time
- 16 ns
- Part # Aliases
- SP001529342
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.