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Nexperia

BC868,115

Bipolar Transistors - BJT NPN 20V 1A

Basic Information

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Manufacturer
Nexperia
Product Category
Bipolar Transistors - BJT
Package
SOT-89-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

18 parameters
Transistor Polarity
NPN
Configuration
Single
Collector- Emitter Voltage VCEO Max
20 V
Collector- Base Voltage VCBO
32 V
Emitter- Base Voltage VEBO
5 V
Maximum DC Collector Current
1 A
Gain Bandwidth Product fT
60 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
DC Current Gain hFE Max
50 at 5 mA, 10 V
Height
1.6 mm
Length
4.6 mm
Show more parameters (6)
Width
2.6 mm
DC Collector/Base Gain hfe Min
50 at 5 mA, 10 V, 85 at 500 mA, 1 V, 60 at 1 A, 1 V, 40 at 2 A, 1 V
Pd - Power Dissipation
1000 mW
Qualification
AEC-Q101
Part # Aliases
BC868 T/R
Unit Weight
0.004603 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

BC868,115 Specifications and Datasheet | ChipSourceHub