NXP Semiconductors
MRF8P20165WHR3
RF MOSFET Transistors HV8 2GHZ 165W NI780-4
Basic Information
View Datasheet ↗- Manufacturer
- NXP
- Brand
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Series
- MRF8P20165WH
- Package
- NI-780S-4
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- N-Channel
- Technology
- Si
- Vds - Drain-Source Breakdown Voltage
- 65 V
- Gain
- 16.3 dB
- Output Power
- 28 W
- Maximum Operating Temperature
- + 125 C
- Configuration
- Single
- Operating Frequency
- 1.88 GHz to 2.025 GHz
- Vgs - Gate-Source Voltage
- 10 V
- Vgs th - Gate-Source Threshold Voltage
- 1.8 V
- Part # Aliases
- 935314476128
- Unit Weight
- 0.227397 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.