ROHM Semiconductor
TT8M3TR
MOSFET 1.5V Drive Nch+Pch MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFET
- Package
- TSST-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
25 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel, P-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 2.5 A, 2.4 A
- Rds On - Drain-Source Resistance
- 140 mOhms, 360 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 300 mV
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 3.6 nC, 6.7 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1.25 W
Show more parameters (13)
- Configuration
- Dual
- Channel Mode
- Enhancement
- Height
- 0.8 mm
- Length
- 3 mm
- Product
- MOSFET
- Type
- Power MOSFET
- Width
- 1.6 mm
- Forward Transconductance - Min
- 2.7 S, 2.4 S
- Fall Time
- 17 ns, 45 ns
- Rise Time
- 17 ns, 25 ns
- Typical Turn-Off Delay Time
- 28 ns, 55 ns
- Typical Turn-On Delay Time
- 9 ns, 9 ns
- Part # Aliases
- TT8M3
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.