ROHM Semiconductor
BCX70KT216
Bipolar Transistors - BJT TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Series
- BCX70
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 45 V
- Collector- Base Voltage VCBO
- 45 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 550 mV
- Maximum DC Collector Current
- 200 mA
- Gain Bandwidth Product fT
- 125 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 630 at 2 mA, 5 V
- Continuous Collector Current
- 200 mA
- DC Collector/Base Gain hfe Min
- 250 at 2 mA, 5 V
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.