Infineon Technologies
BFS 17P E6327
RF Bipolar Transistors NPN Silicon RF TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- RF Bipolar Transistors
- Series
- BFS17
- Package
- SOT-23
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Technology
- Si
- Transistor Polarity
- NPN
- DC Collector/Base Gain hfe Min
- 20
- Collector- Emitter Voltage VCEO Max
- 15 V
- Emitter- Base Voltage VEBO
- 2.5 V
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- Configuration
- Single
- Collector- Base Voltage VCBO
- 25 V
- Height
- 1 mm
- Length
- 2.9 mm
- Width
- 1.3 mm
Show more parameters (5)
- Gain Bandwidth Product fT
- 2.5 MHz
- Maximum DC Collector Current
- 0.025 A
- Pd - Power Dissipation
- 280 mW
- Part # Aliases
- BFS17PE6327HTSA1 BFS17PE6327XT SP000011073
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.