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Toshiba

RFM00U7U(TE85L,F)

RF MOSFET Transistors Radio-Freq PwrMOSFET N-Ch 0.1A 0.25W 20V

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
RF MOSFET Transistors
Series
RFM00
Package
SOT-343-4
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

12 parameters
Transistor Polarity
N-Channel
Technology
Si
Id - Continuous Drain Current
100 mA
Vds - Drain-Source Breakdown Voltage
20 V
Gain
13 dB
Output Power
200 mW
Configuration
Dual
Operating Frequency
520 MHz
Type
RF Power MOSFET
Pd - Power Dissipation
250 mW
Vgs - Gate-Source Voltage
10 V
Vgs th - Gate-Source Threshold Voltage
1.3 V

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

RFM00U7U(TE85L,F) Specifications and Datasheet | ChipSourceHub