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Wolfspeed / Cree

CGHV96050F1

RF JFET Transistors GaN HEMT 7.9-9.6GHz, 50 Watt

Basic Information

View Datasheet ↗
Manufacturer
Cree, Inc.
Brand
Wolfspeed / Cree
Product Category
RF JFET Transistors
Package
440210
Mounting Style
Screw Mount
Packaging
Tray
RoHS
Compliant (source record)

Technical Specifications

18 parameters
Transistor Type
HEMT
Technology
GaN
Gain
16 dB
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
100 V
Vgs - Gate-Source Breakdown Voltage
- 10 V to 2 V
Id - Continuous Drain Current
6 A
Output Power
80 W
Minimum Operating Temperature
- 40 C
Maximum Operating Temperature
+ 150 C
Configuration
Single
Height
5.03 mm
Show more parameters (6)
Length
17.55 mm
Operating Frequency
7.9 GHz to 9.6 GHz
Product
GaN HEMT
Width
24.26 mm
Development Kit
CGHV96050F1-TB
Vgs th - Gate-Source Threshold Voltage
- 3 V

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

CGHV96050F1 Specifications and Datasheet | ChipSourceHub