Toshiba
2SA2154CT-GR,L3F
Bipolar Transistors - BJT Transistor for Low Freq. Amplification
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SA2154
- Package
- CST-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 50 V
- Collector- Base Voltage VCBO
- - 50 V
- Emitter- Base Voltage VEBO
- - 5 V
- Collector-Emitter Saturation Voltage
- - 180 mV
- Maximum DC Collector Current
- - 100 mA
- Gain Bandwidth Product fT
- 80 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 400
- Height
- 0.38 mm
- Length
- 1 mm
Show more parameters (3)
- Width
- 0.6 mm
- DC Collector/Base Gain hfe Min
- 120
- Pd - Power Dissipation
- 100 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.