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onsemi

BC857BDW1T1G

Bipolar Transistors - BJT 100mA 50V Dual PNP

Basic Information

View Datasheet ↗
Manufacturer
onsemi
Product Category
Bipolar Transistors - BJT
Series
BC857BDW1
Package
SC-70-6
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

16 parameters
Technology
Si
Transistor Polarity
PNP
Configuration
Dual
Maximum DC Collector Current
100 mA
Collector- Emitter Voltage VCEO Max
45 V
Collector- Base Voltage VCBO
50 V
Emitter- Base Voltage VEBO
5 V
Collector-Emitter Saturation Voltage
650 mV
Pd - Power Dissipation
380 mW
Gain Bandwidth Product fT
100 MHz
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Show more parameters (4)
Continuous Collector Current
- 100 mA
Country of Origin
CN
DC Collector/Base Gain hfe Min
220
Unit Weight
0.000988 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

BC857BDW1T1G Specifications and Datasheet | ChipSourceHub