Toshiba
HN4C51J(TE85L,F)
Bipolar Transistors - BJT Trans LFreq 120V NPN NPN 0.1A
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- HN4C51
- Package
- SOT-25-5
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
13 parameters- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 120 V
- Collector- Base Voltage VCBO
- 120 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.3 V
- Maximum DC Collector Current
- 100 mA
- Gain Bandwidth Product fT
- 100 MHz
- DC Current Gain hFE Max
- 700
- Continuous Collector Current
- 100 mA
- DC Collector/Base Gain hfe Min
- 200
- Pd - Power Dissipation
- 300 mW
Show more parameters (1)
- Unit Weight
- 0.000494 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.